Its large stimulated emission cross-section at lasing wavelength, high absorption coefficient and wide absorption bandwidth at pump wavelength, high laser induced damage threshold as well as good physical, optical and mechanical properties make Nd:YVO4 an excellent crystal for high power, stable and cost effective diode pumped solid-state lasers.
Nd: YVO4 can produce IR green and blue laser by using minor different set-up. A broad absorption band centered at 808nm and favorable mechanical properties make Nd:YVO4 well suited for compact, efficient, high power diode-pumped lasers. Natural birefringence gives rise to a highly polarized output at 1064.3 and 1342nm.
Featured
Low lasing threshold and high slope efficiency
Low dependency on pump wavelength
Large stimulated emission cross-section at lasing wavelength
High absorption over a wide pumping wavelength bandwidth
Optically uniaxial and large birefringence emits polarized laser
Laser Properties of Nd:YVO4 VS Nd:YAG
|
Laser crystal |
Nd doped |
Ó |
a |
τ |
La |
Pth |
Effi. |
|
(atm%) |
(x10-19cm2) |
(cm-1) |
(µs) |
(mm) |
(mW) |
( %) |
|
|
Nd:YVO4(a-cut) |
1.0 |
25 |
31.2 |
90 |
0.32 |
30 |
52 |
|
2 |
72.4 |
50 |
0.14 |
78 |
48.6 |
||
|
Nd:YVO4(c-cut) |
1.1 |
7 |
9.2 |
90 |
|
231 |
45.5 |
|
Nd:YAG |
0.85 |
6 |
7.1 |
230 |
1.41 |
115 |
38.6 |
Stimulated emission cross-sections (σ)
Absorption Coefficient (α)
Fluorescent Lifetime (τ)
Absorption Length (La)
Threshold Power (Pth)
Pump Quantum Efficiency
Basic Properties
|
Atomic Density (Nd1.0%) |
1.26 x1020 atoms/cm3 |
|
Crystal Structure |
Zircon Tetragonal, space group D4h |
|
a=b=7.12, c=6.29 |
|
|
Density |
4.22 g/cm3 |
|
Mohs Hardness |
4-5(Glass-like) |
|
Thermal Expansion Coefficient |
a=4.43x10-6/K, c=11.37x10-6/K |
Optical Properties
|
Lasing Wavelengths |
914nm, 1064 nm, 1342 nm |
|
Thermal Optical Coefficient |
dna/dT=8.5x10-6/K, dnc/dT=3.0x10-6/K |
|
Stimulated Emission Cross-Section |
25.0x10-19cm2 @1064 nm |
|
Fluorescent Lifetime |
90us @808 nm, (50us @808 nm for 2atm% Nd doped) |
|
Absorption Coefficient |
31.4 cm-1@808 nm |
|
Absorption Length |
0.32 mm @808 nm |
|
Intrinsic Loss |
Less than 0.1% cm-1@1064 nm |
|
Gain Bandwidth |
0.96 nm (257 GHz) @1064 nm |
|
Polarized Laser Emission |
p polarization, Parallel to optic axis (c-axis) |
|
Diode Pumped Optical to Optical Efficiency |
> 60% |
|
Sellmeier Equation |
no2=3.77834+0.069736/(λ2-0.04724) - 0.0108133λ2 ne2=4.59905+0.110534/(λ2-0.04813) - 0.0122676λ2 |
Specifications
|
Nd Dopant Level |
0.1 - 3.0 atm% |
|
Orientation Tolerance |
A-cut/C-cut +/-0.5deg. |
|
Dimensional Tolerance |
±0.1mm |
|
Surface Flatness |
λ/10@633nm |
|
Wavefront Distortion |
λ/8@633nm |
|
Surface Quality |
10/5 Scratch and Dig |
|
Parallelism |
<10 arc seconds |
|
Clear Aperture |
>95% |
|
Bevel/Chamfer |
<0.1mm@45deg. |
|
Coating |
AR/HR/PR coating upon customer’s request |
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